We demonstrate improved device performance by applying oxide sidewall spacer technology to a block-oxide-enclosed Si body to\r\ncreate a fully depleted silicon-on-insulator (FDSOI) nMOSFET, which overcomes the need for a uniformultrathin silicon film. The\r\npresence of block-oxide along the sidewalls of the Si body significantly reduces the influence of drain bias over the channel. The\r\nproposed FDSOI structure therefore outperforms conventional FDSOI with regard to its drain-induced barrier lowering (DIBL),\r\non/off current ratio, subthreshold swing, and threshold voltage rolloff.Thenew FDSOI structure is in fact shown to behave similarly\r\nto an ultrathin body (UTB) SOI but without the associated disadvantages and technological challenges of the ultrathin film, because\r\na thick Si body allows for reduced sensitivity to self-heating, thereby improving thermal stability.
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